View QM50DY-H_180670.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM50DY-H
* * * * *
IC Collector current .......................... 50A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 20 80 20 27 6.5
B2 E2
(7) B2 E2 C1
10.5 13 10.5
34
C2E1 C2E1 E2 C1 12
E1 B1
E2
E1 B1 Tab#110, t=0.5
M5
31
LABEL
(8)
22.5
6.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 50 50 310 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=50A, IB=0.65A -IC=50A (diode forward voltage) IC=50A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.0 2.5 1.75 -- 1.5 12 3.0 0.4 1.3 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
100 Tj=25C IB=1A 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 0
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
VCE=5.0V
COLLECTOR CURRENT IC (A)
80 IB=0.3A 60 IB=0.2A 40 IB=0.1A 20
DC CURRENT GAIN hFE
IB=0.65A
VCE=2.0V
Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.2 1.6 2.0 2.4 2.8 3.2 VCE=2.0V Tj=25C
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
10 0 7 5 4 VCE(sat) 3 IB=0.65A 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5
Tj=25C Tj=125C
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
2
ton, ts, tf (s)
4
3
IC=50A
SWITCHING TIME
10 1 7 5 4 3 2
ts
VCC=300V IB1=-IB2=1A ton
2
1
IC=20A IC=30A
0 10 -2
2 3 4 5 7 10 -1
2 3 4 5 7 10 0
10 0 7 5 4 3 2 10 0
Tj=25C Tj=125C 2 3 4 5 7 10 1
tf 2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3 ts 10 1 7 VCC=300V 5 IB1=1A 4 IC=50A 3 2 tf 10 0 7 5 4 3 10 -1 Tj=25C Tj=125C 2 3 4 5 7 10 0 2 3 4 5 7 10 1
REVERSE BIAS SAFE OPERATING AREA
160
COLLECTOR CURRENT IC (A)
2
ts, tf (s)
140 120
Tj=125C
IB2=-1A 100 80 60 40 20 0 0 200 400 600 800 -3A -5A -10A
SWITCHING TIME
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 TC=25C NON-REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
DERATING FACTOR OF F. B. S. O. A.
100 90 SECOND BREAKDOWN AREA
COLLECTOR CURRENT IC (A)
10
D C
m
s
50 10 0 0 ss
DERATING FACTOR (%)
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 7 10 1 2 3 4 5 7 0.5
0.4
1m s
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
Zth (j-c) (C/ W)
10 2 7 5 4 3 2 10 1 7 5 4 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL)
0.3
0.2
0.1 0 10 -3 2 3 4 5 7 10 -22 3 4 5 7 10 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4
10 0 0.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM50DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr trr (s) FORWARD CURRENT IF (A)
Feb.1999
10 2 Tj=25C Tj=125C VCC=300V IB1=-IB2=1A 10 1
400
300
200
100
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 10 0 Qrr 7 5 3 trr 2 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 710 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s)

▲Up To Search▲

Price & Availability of QM50DY-H

	To Download QM50DY-H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .